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| MMBTSC4075W NPN Silicon Epitaxial Planar Transistor For switching application. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 60 50 5 150 30 200 150 - 55 to + 150 Unit V V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group Symbol O Y G L hFE hFE hFE hFE ICBO IEBO VCE(sat) fT Cob Min. 70 120 200 350 80 - Max. 140 240 400 700 0.1 0.1 0.25 3.5 Unit A A V MHz pF Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Transition Frequency at VCE = 10 V, IC = 1 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/03/2009 MMBTSC4075W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/03/2009 |
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